The NGD8201ANT4G is an insulated gate bipolar transistor (IGBT) from Littelfuse. It is designed for high-voltage, high-current switching applications where efficiency and reliability are critical.

Applications

• Ignition systems in automotive applications
• Motor control circuits
• Inductive load switching
• Solid state relays
• High-voltage inverters

Features

• High input impedance
• Low saturation voltage
• High switching speed
• Gate-Source clamping circuitry to protect against overvoltage
• Pb-Free Package is Available

Benefits

• Enables efficient and reliable switching of high-voltage and high-current loads.
• Reduces power losses in switching applications, improving overall system efficiency.
• Simplifies gate drive circuitry due to its high input impedance.
• Offers a robust and durable solution for demanding automotive and industrial applications.
• Compliant with environmental regulations with its Pb-Free package.

Additional Details

The NGD8201ANT4G is an automotive-qualified IGBT. It features a collector-emitter voltage (VCE) rating of 400V and a collector current (IC) rating of 10A. The gate threshold voltage is typically 3V. The operating junction temperature range is -55°C to +175°C. The package is a DPAK (TO-252). The device incorporates an integrated gate-source clamp for overvoltage protection.

The NGD8201ANT4G IGBT from Littelfuse is a robust and efficient solution for high-voltage, high-current switching applications, particularly in automotive ignition systems and motor control.