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DDTC114WE-7-F

Parte No DDTC114WE-7-F
Produttore Diodes Incorporated
Catalogo Transistors (BJT) - Single, Pre - Biased
Descrizione TRANS PREBIAS NPN 150MW SOT523
Scheda tecnica
Campione
Stato RoHS rohs
Modelli ECAD
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Categorie Discrete Semiconductor Products
Costruttore Diodes Incorporated
Imballaggio Reel - TR
Stato Active
Polarità del transistor NPN - Pre-Biased
Corrente massima collettore 100mA
Tensione di rottura massima collettore-emettitore VCEO 50V
Resistore - Base (R1) (Ohm) 10k
Resistore - Base emettitore (R2) (Ohm) 4.7k
Guadagno tipico (hFE) (min) 24 @ 10mA, 5V
Vce (sat) max 300mV @ 500μA, 10mA
Corrente di interdizione collettore (max) 500nA
Frequenza - Transizione 250MHz
Dissipazione di potenza massima 150mW
Montaggio SMD (SMT)
Contenitore/involucro SOT-523
Condizione di conservazione Dry storage cabinet & Humidity protection package
Codice Articolo Win Source 101160-DDTC114WE-7-F
Materie prime Based on silicon element (Si) ; Blue-grey metallic luster
Popolarità Medium
Rischio di contraffazione sul mercato aperto 29 pct.
Stato della domanda e dell'offerta Balance
Modelli ECAD Contact us to download
Scheda dati sulla sicurezza dei materiali (MSDS) Get Access
Modello 3D Ultra Librarian Ultra Librarian DDTC114WE-7-F Modello CAD

Descrizione

Diodes Incorporated DDTC114WE-7-F NPN Pre-Biased Transistor

The DDTC114WE-7-F from Diodes Incorporated is a high-performance, NPN pre-biased transistor that simplifies circuit design by integrating the biasing resistors. This small signal transistor is designed for use in various applications, including switching and amplification in consumer electronics, industrial, and telecommunications equipment.

Key Features

  • Pre-Biased Configuration: Comes with built-in biasing resistors, which reduces component count and simplifies circuit layout.
  • Surface-Mount Package: Encased in a small SOT-323 (SC-70) package, making it suitable for high-density PCB designs.
  • Energy Efficient: Features low saturation voltage and high current gain, which enhances power efficiency in electronic circuits.
  • RoHS Compliant: Manufactured with environmentally friendly materials, complying with RoHS standards for reduced environmental impact.

Electrical Characteristics

  • Collector-Emitter Voltage (Vceo): Capable of withstanding up to 50V, providing a good margin for voltage spikes and surges in circuits.
  • Collector Current (Ic): Supports a continuous collector current of up to 100mA, suitable for driving small loads.
  • Resistor Ratios: Features resistor ratios of R1/R2 = 10KΩ/10KΩ, offering balanced biasing for stable operation.
  • Power Dissipation (Pd): Rated for a maximum power dissipation of 150mW, ensuring reliable performance under typical operating conditions.

Applications

The DDTC114WE-7-F is versatile and can be used in a wide array of applications. Its compact size and integrated bias resistors make it an ideal choice for:

  • Load/relay drivers
  • Logic level shifters
  • Signal processing
  • Power management functions

With its robust design and integrated features, the DDTC114WE-7-F is a practical component for designers looking to optimize their circuit designs with reliable and efficient transistor solutions. Diodes Incorporated's commitment to quality ensures that this pre-biased transistor will meet the rigorous demands of modern electronic devices.

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