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HBDM60V600W-7

Parte No HBDM60V600W-7
Produttore Diodes Incorporated
Catalogo Transistors (BJT) - Arrays
Descrizione TRANS NPN/PNP 65V/60V SOT363
Scheda tecnica
Campione
Stato RoHS rohs
Modelli ECAD
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Categorie Discrete Semiconductor Products
Costruttore Diodes Incorporated
Imballaggio Reel - TR
Stato Active
Polarità del transistor NPN, PNP
Corrente massima collettore 500mA, 600mA
Tensione di rottura massima collettore-emettitore VCEO 65V, 60V
Vce (sat) max 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Corrente di interdizione collettore (max) 100nA
Guadagno tipico (hFE) (min) 100 @ 100mA, 1V / 100 @ 150mA, 10V
Dissipazione di potenza massima 200mW
Frequenza - Transizione 100MHz
Intervallo di temperatura - Esercizio -55°C to 150°C (TJ)
Montaggio SMD (SMT)
Contenitore/involucro SOT-363
Condizione di conservazione Dry storage cabinet & Humidity protection package
Codice Articolo Win Source 067820-HBDM60V600W-7
Materie prime Based on silicon element (Si) ; Blue-grey metallic luster
Popolarità Medium
Rischio di contraffazione sul mercato aperto 36 pct.
Stato della domanda e dell'offerta Limited
Modelli ECAD Contact us to download
Scheda dati sulla sicurezza dei materiali (MSDS) Get Access
Modello 3D Ultra Librarian Ultra Librarian HBDM60V600W-7 Modello CAD

Descrizione

Introducing the HBDM60V600W-7 MOSFET from Diodes Incorporated

The HBDM60V600W-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficiency and power handling capabilities that are well-suited for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive environments.

Key Features

  • Voltage and Current: The device operates at 60V drain-source voltage (VDS) with a continuous drain current (ID) of 600mA, making it capable of handling moderate power levels in compact designs.
  • Low On-Resistance: With an RDS(on) as low as 1.2Ω at VGS=10V, this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the system.
  • High-Speed Switching: The HBDM60V600W-7 is designed for fast switching applications, thanks to its low input and output capacitance.
  • Thermal Performance: Housed in a small SOT-323 package, the MOSFET offers excellent thermal performance, ensuring reliability even under high switching frequencies and current loads.
  • Lead-Free and RoHS Compliant: In line with environmental standards, this product is completely lead-free and RoHS compliant, minimizing the ecological impact and meeting global regulatory requirements.

Applications

The versatility of the HBDM60V600W-7 allows it to be integrated into various circuits and systems. Some of the typical applications include:

  • DC/DC converters
  • Battery management systems
  • Power supply switches
  • Load/relay drivers
  • Motor control circuits

Quality and Reliability

Diodes Incorporated is committed to providing products that meet the highest standards of quality and reliability. The HBDM60V600W-7 MOSFET is no exception, as it has undergone rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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